Tuning surface wettability using single layered and hierarchically ordered arrays of spherical colloidal particlesElectronic supplementary information (ESI) available: Derivations of the wetting state equations, contact angle data for different particle size arrays, SEM images of HNCP patterns with different particle sizes, AFM images and analysis for determining R2 for each coating, and XPS analysis for the chemical quantification of the PECVD coatings. See DOI: 10.1039/c2sm27773e

A control over wetting properties of a surface can be achieved by tuning surface roughness and surface chemistry. In this study, we formed single layer roughness and dual levels of hierarchical roughness with hexagonal non-contiguously close packed (HNCP) patterns of spherical particles using colloi...

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Hauptverfasser: Badge, Ila, Bhawalkar, Sarang P, Jia, Li, Dhinojwala, Ali
Format: Artikel
Sprache:eng
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Zusammenfassung:A control over wetting properties of a surface can be achieved by tuning surface roughness and surface chemistry. In this study, we formed single layer roughness and dual levels of hierarchical roughness with hexagonal non-contiguously close packed (HNCP) patterns of spherical particles using colloidal lithography. Surface chemistry was controlled using plasma-enhanced chemical vapour deposition (PECVD). A hexagonal unit cell model, which is representative of the HNCP pattern, was used to predict the contact angles. The predictions of this model were in good agreement with experimentally measured contact angles and also provided thermodynamic stability of different wetting state. The systematic thermodynamic analysis of wetting properties is important when using structured surfaces at different hydrostatic pressures, relative humidity, temperature fluctuations or prolonged exposure to water. A combination of colloidal lithography and Plasma Enhanced Chemical Vapour Deposition (PECVD) was used to demonstrate the existence of different wetting states of a patterned surface by fine tuning the surface roughness and surface chemistry.
ISSN:1744-683X
1744-6848
DOI:10.1039/c2sm27773e