Post-deposition dipping method for improving the electronic properties of a narrow bandgap conjugated polymerElectronic supplementary information (ESI) available: Detailed experimental procedure, UV-vis absorption spectra, additional device information of FETs in-plane and out-of-plane GIXD. See DOI: 10.1039/c2jm31183f

By dipping into hexane, it is possible to efficiently eliminate the low MW component and also improve the molecular ordering of a conjugated polymer thin film. These changes improve the performance of field-effect transistors. The correlation between the nanoscalar structural features and the electrical properties enables us to determine both the appropriate dipping time and how the low MW component influences electronic properties. By simply dipping thin-films into hexane, it is possible to efficiently eliminate the low MW components together with improving the molecular ordering of a conjugated polymer thin-film which enable the high performance of field-effect transistors.