Highly structured, biomorphous -SiC with high specific surface area from Equisetaceae

Mesoporous, highly structured silicon carbide (-SiC) was synthesised from renewable plant materials (two Equisetaceae species) in a one-step carbothermal process at remarkably low temperatures down to 1200 C. The SiC precursor is a siliconcarbon mixture with finely dispersed carbon prepared by pyrolysis of the organic plant matrix. Yields are 3 to 100% ( Si/Si related to the silicon deposited in the plant material), depending on reaction temperature and time. IR spectroscopy, X-ray diffraction, and nitrogen sorption prove the formation of high-purity -SiC with minor inorganic impurities after purification and a high specific surface area of up to 660 m 2 g 1 . Scanning electron microscopy shows that the plant morphology is maintained in the final SiC. Sedimentation analysis finds a mean particle size (diameters d 50 ) of 20 m. Highly structured -SiC with high specific surface areas of up to 660 m 2 g 1 was synthesized in a one-step carbothermal process at low temperatures down to 1200 C.