Solution processed high performance pentacene thin-film transistorsElectronic supplementary information (ESI) available: Detailed synthetic procedures, FET devices fabrication, characterizations, AFM images and spectra. See DOI: 10.1039/c2cc31754k

High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable fiel...

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Hauptverfasser:	Chao, Ting-Han, Chang, Ming-Jen, Watanabe, Motonori, Luo, Ming-Hui, Chang, Yuan Jay, Fang, Tzu-Chien, Chen, Kew-Yu, Chow, Tahsin J
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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