Solution processed high performance pentacene thin-film transistorsElectronic supplementary information (ESI) available: Detailed synthetic procedures, FET devices fabrication, characterizations, AFM images and spectra. See DOI: 10.1039/c2cc31754k

High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm 2 V -1 s -1 with an on/off ratio of 10 6 . High performance thin-film transistors were fabricated using a pentacene precursor through a multiple spin-heat procedure. The device made in a top-contact configuration exhibited a field-effect mobility of 0.38 cm 2 V -1 s -1 .