Solution processed high performance pentacene thin-film transistorsElectronic supplementary information (ESI) available: Detailed synthetic procedures, FET devices fabrication, characterizations, AFM images and spectra. See DOI: 10.1039/c2cc31754k
High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable fiel...
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| creator | Chao, Ting-Han Chang, Ming-Jen Watanabe, Motonori Luo, Ming-Hui Chang, Yuan Jay Fang, Tzu-Chien Chen, Kew-Yu Chow, Tahsin J |
| description | High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm
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High performance thin-film transistors were fabricated using a pentacene precursor through a multiple spin-heat procedure. The device made in a top-contact configuration exhibited a field-effect mobility of 0.38 cm
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| doi_str_mv | 10.1039/c2cc31754k |
| format | Article |
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2
V
-1
s
-1
with an on/off ratio of 10
6
.
High performance thin-film transistors were fabricated using a pentacene precursor through a multiple spin-heat procedure. The device made in a top-contact configuration exhibited a field-effect mobility of 0.38 cm
2
V
-1
s
-1
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2
V
-1
s
-1
with an on/off ratio of 10
6
.
High performance thin-film transistors were fabricated using a pentacene precursor through a multiple spin-heat procedure. The device made in a top-contact configuration exhibited a field-effect mobility of 0.38 cm
2
V
-1
s
-1
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2
V
-1
s
-1
with an on/off ratio of 10
6
.
High performance thin-film transistors were fabricated using a pentacene precursor through a multiple spin-heat procedure. The device made in a top-contact configuration exhibited a field-effect mobility of 0.38 cm
2
V
-1
s
-1
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| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| title | Solution processed high performance pentacene thin-film transistorsElectronic supplementary information (ESI) available: Detailed synthetic procedures, FET devices fabrication, characterizations, AFM images and spectra. See DOI: 10.1039/c2cc31754k |
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