RONALD CHARLES NEWMAN FInstP: 10 December 1931 — 30 July 2014

RONALD CHARLES NEWMAN FInstP: 10 December 1931 — 30 July 2014

Ronald Charles (Ron) Newman was one of the most versatile semiconductor physicists of his generation and is distinguished for his work in several different areas, most notably epitaxial growth and the behaviour of impurities and dopants in a range of device-related materials, mainly silicon and gall...

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Veröffentlicht in:Biographical memoirs of fellows of the Royal Society 2016-01, Vol.62, p.447-459
1. Verfasser: Joyce, Bruce A.
Format: Artikel
Sprache:eng
Schlagworte:
Atoms
Hydrogen
Impurities
Industrial research
Materials
Memoirs
Molecules
Oxygen
Physics
Semiconductors
Silicon
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Beschreibung
Zusammenfassung:Ronald Charles (Ron) Newman was one of the most versatile semiconductor physicists of his generation and is distinguished for his work in several different areas, most notably epitaxial growth and the behaviour of impurities and dopants in a range of device-related materials, mainly silicon and gallium arsenide. His most significant contributions came from the application of local vibrational-mode spectroscopy to studies of the segregation and diffusion of oxygen and hydrogen in silicon. The results were of fundamental importance in the fabrication of integrated circuits.
ISSN:0080-4606
1748-8494
DOI:10.1098/rsbm.2016.0004