Probing FeSi, a d -electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves
Recently, evidence for a conducting surface state (CSS) below 19 K was reported for the correlated -electron small gap semiconductor FeSi. In the work reported herein, the CSS and the bulk phase of FeSi were probed via electrical resistivity ρ measurements as a function of temperature , magnetic fie...
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Veröffentlicht in: | Proceedings of the National Academy of Sciences - PNAS 2023-02, Vol.120 (8), p.e2216367120-e2216367120 |
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Zusammenfassung: | Recently, evidence for a conducting surface state (CSS) below 19 K was reported for the correlated
-electron small gap semiconductor FeSi. In the work reported herein, the CSS and the bulk phase of FeSi were probed via electrical resistivity ρ measurements as a function of temperature
, magnetic field
to 60 T, and pressure
to 7.6 GPa, and by means of a magnetic field-modulated microwave spectroscopy (MFMMS) technique. The properties of FeSi were also compared with those of the Kondo insulator SmB
to address the question of whether FeSi is a
-electron analogue of an
-electron Kondo insulator and, in addition, a "topological Kondo insulator" (TKI). The overall behavior of the magnetoresistance of FeSi at temperatures above and below the onset temperature
= 19 K of the CSS is similar to that of SmB
. The two energy gaps, inferred from the ρ(
) data in the semiconducting regime, increase with pressure up to about 7 GPa, followed by a drop which coincides with a sharp suppression of
. Several studies of ρ(
) under pressure on SmB
reveal behavior similar to that of FeSi in which the two energy gaps vanish at a critical pressure near the pressure at which
vanishes, although the energy gaps in SmB
initially decrease with pressure, whereas in FeSi they increase with pressure. The MFMMS measurements showed a sharp feature at
≈ 19 K for FeSi, which could be due to ferromagnetic ordering of the CSS. However, no such feature was observed at
≈ 4.5 K for SmB
. |
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ISSN: | 0027-8424 1091-6490 |
DOI: | 10.1073/pnas.2216367120 |