Effect of Titanium and Molybdenum Cover on the Surface Restructuration of Diamond Single Crystal during Annealing

Diamond is an important material for electrical and electronic devices. Because the diamond is in contact with the metal in these applications, it becomes necessary to study the metal-diamond interaction and the structure of the interface, in particular, at elevated temperatures. In this work, we st...

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Veröffentlicht in:Materials 2023-02, Vol.16 (4), p.1650
Hauptverfasser: Okotrub, Alexander V, Sedelnikova, Olga V, Gorodetskiy, Dmitriy V, Fedorenko, Anastasiya D, Asanov, Igor P, Palyanov, Yury N, Lapega, Alina V, Gurova, Olga A, Bulusheva, Lyubov G
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Sprache:eng
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Zusammenfassung:Diamond is an important material for electrical and electronic devices. Because the diamond is in contact with the metal in these applications, it becomes necessary to study the metal-diamond interaction and the structure of the interface, in particular, at elevated temperatures. In this work, we study the interaction of the (100) and (111) surfaces of a synthetic diamond single crystal with spattered titanium and molybdenum films. Atomic force microscopy reveals a uniform coating of titanium and the formation of flattened molybdenum nanoparticles. A thin titanium film is completely oxidized upon contact with air and passes from the oxidized state to the carbide state upon annealing in an ultrahigh vacuum at 800 °C. Molybdenum interacts with the (111) diamond surface already at 500 °C, which leads to the carbidization of its nanoparticles and catalytic graphitization of the diamond surface. This process is much slower on the (100) diamond surface; sp -hybridized carbon is formed on the diamond and the top of molybdenum carbide nanoparticles, only when the annealing temperature is raised to 800 °C. The conductivity of the resulting sample is improved when compared to the Ti-coated diamond substrates and the Mo-coated (111) substrate annealed at 800 °C. The presented results could be useful for the development of graphene-on-diamond electronics.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma16041650