Picosecond optospintronic tunnel junctions

Spintronic devices have become promising candidates for next-generation memory architecture. However, state-of-the-art devices, such as perpendicular magnetic tunnel junctions (MTJs), are still fundamentally constrained by a subnanosecond speed limitation, which has remained a long-lasting scientifi...

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Veröffentlicht in:	Proceedings of the National Academy of Sciences - PNAS 2022-06, Vol.119 (24), p.1
Hauptverfasser:	Wang, Luding, Cheng, Houyi, Li, Pingzhi, van Hees, Youri L. W., Liu, Yang, Cao, Kaihua, Lavrijsen, Reinoud, Lin, Xiaoyang, Koopmans, Bert, Zhao, Weisheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Bilayers Gadolinium Magnetoresistivity Memory devices Physical Sciences Power consumption Power management Thermal stability Tunnel junctions Tunnel magnetoresistance
Online-Zugang:	Volltext
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