Mechanical exfoliation and electrical characterization of a one-dimensional Nb2Se9 atomic crystal

A novel semiconductor 1D nanomaterial, Nb2Se9, was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb2Se9 contains numerous single Nb2Se9 chains linked by van der Waals interactions, and we confirmed that a bundle of chains can...

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Veröffentlicht in:RSC advances 2018-01, Vol.8 (66), p.37724-37728
Hauptverfasser: Kim, Bum Jun, Jeong, Byung Joo, Oh, Seungbae, Chae, Sudong, Choi, Kyung Hwan, Nasir, Tuqeer, Lee, Sang Hoon, Kwan-Woo, Kim, Lim, Hyung Kyu, Choi, Ik Jun, Chi, Linlin, Sang-Hwa Hyun, Yu, Hak Ki, Jae-Hyun, Lee, Jae-Young, Choi
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Sprache:eng
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Zusammenfassung:A novel semiconductor 1D nanomaterial, Nb2Se9, was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb2Se9 contains numerous single Nb2Se9 chains linked by van der Waals interactions, and we confirmed that a bundle of chains can be easily separated by mechanical cleavage. The exfoliated Nb2Se9 flakes exhibit a quasi-two-dimensional layered structure, and the number of layers can be controlled using the repeated-peeling method. The work function varied depending on the thickness of the Nb2Se9 flakes as determined by scanning Kelvin probe microscopy. Moreover, we first implemented a field effect transistor (FET) based on nanoscale Nb2Se9 flakes and verified that it has p-type semiconductor characteristics. This novel 1D material can form a new family of 2D materials and is expected to play important roles in future nano-electronic devices.
ISSN:2046-2069
DOI:10.1039/c8ra07437b