High-Level Systematic Ab Initio Comparison of Carbon- and Silicon-Centered SN2 Reactions

We characterize the stationary points along the Walden inversion, front-side attack, and double-inversion pathways of the X– + CH3Y and X– + SiH3Y [X, Y = F, Cl, Br, I] SN2 reactions using chemically accurate CCSD­(T)-F12b/aug-cc-pVnZ [n = D, T, Q] levels of theory. At the carbon center, Walden inve...

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Veröffentlicht in:The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory Molecules, spectroscopy, kinetics, environment, & general theory, 2021-11, Vol.125 (44), p.9645-9657
Hauptverfasser: Dékány, Attila Á, Kovács, Gyula Z, Czakó, Gábor
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Sprache:eng
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Zusammenfassung:We characterize the stationary points along the Walden inversion, front-side attack, and double-inversion pathways of the X– + CH3Y and X– + SiH3Y [X, Y = F, Cl, Br, I] SN2 reactions using chemically accurate CCSD­(T)-F12b/aug-cc-pVnZ [n = D, T, Q] levels of theory. At the carbon center, Walden inversion dominates and proceeds via prereaction (X–···H3CY) and postreaction (XCH3···Y–) ion-dipole wells separated by a usually submerged transition state (X–H3C–Y)−, front-side attack occurs over high barriers, double inversion is the lowest-energy retention pathway for X = F, and hydrogen- (F–···HCH2Y) and halogen-bonded (X–···YCH3) complexes exist in the entrance channel. At the silicon center, Walden inversion proceeds through a single minimum (X–SiH3–Y)−, the front-side attack is competitive via a usually submerged transition state separating pre- and postreaction minima having X–Si–Y angles close to 90°, double inversion occurs over positive, often high barriers, and hydrogen- and halogen-bonded complexes are not found. In addition to the SN2 channels (Y– + CH3X/SiH3X), we report reaction enthalpies for proton abstraction (HX + CH2Y–/SiH2Y–), hydride substitution (H– + CH2XY/SiH2XY), XH···Y– complex formation (XH···Y– + 1CH2/1SiH2), and halogen abstraction (XY + CH3 –/SiH3 – and XY– + CH3/SiH3).
ISSN:1089-5639
1520-5215
DOI:10.1021/acs.jpca.1c07574