Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar InxGa1−xN/GaN Multiple Quantum Wells

In this study, we demonstrated large-area high-quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emissi...

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Veröffentlicht in:Nanoscale research letters 2021-09, Vol.16 (1), p.145-145, Article 145
Hauptverfasser: Chen, Cheng-Chang, Lin, Hsiang-Ting, Chang, Shih-Pang, Kuo, Hao-Chung, Hung, Hsiao-Wen, Chien, Kuo-Hsiang, Chang, Yu-Choung, Shih, M. H.
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Sprache:eng
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Zusammenfassung:In this study, we demonstrated large-area high-quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emission wavelengths of 460 and 520 nm from the regrown In x Ga 1− x N/GaN multiple quantum wells were observed under optical pumping conditions. To confirm the strong coupling between the quantum well emissions and the photonic crystal band-edge resonant modes, the finite-element method was applied to perform a simulation of the 12-fold symmetry photonic quasicrystal lattices.
ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1186/s11671-021-03576-1