One‐Step Sixfold Cyanation of Benzothiadiazole Acceptor Units for Air‐Stable High‐Performance n‐Type Organic Field‐Effect Transistors
Reported here is a new high electron affinity acceptor end group for organic semiconductors, 2,1,3‐benzothiadiazole‐4,5,6‐tricarbonitrile (TCNBT). An n‐type organic semiconductor with an indacenodithiophene (IDT) core and TCNBT end groups was synthesized by a sixfold nucleophilic substitution with c...
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Veröffentlicht in: | Angewandte Chemie International Edition 2021-03, Vol.60 (11), p.5970-5977 |
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Sprache: | eng |
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Zusammenfassung: | Reported here is a new high electron affinity acceptor end group for organic semiconductors, 2,1,3‐benzothiadiazole‐4,5,6‐tricarbonitrile (TCNBT). An n‐type organic semiconductor with an indacenodithiophene (IDT) core and TCNBT end groups was synthesized by a sixfold nucleophilic substitution with cyanide on a fluorinated precursor, itself prepared by a direct arylation approach. This one‐step chemical modification significantly impacted the molecular properties: the fluorinated precursor, TFBT IDT, a poor ambipolar semiconductor, was converted into TCNBT IDT, a good n‐type semiconductor. The electron‐deficient end group TCNBT dramatically decreased the energy of the highest occupied and lowest unoccupied molecular orbitals (HOMO/LUMO) compared to the fluorinated analogue and improved the molecular orientation when utilized in n‐type organic field‐effect transistors (OFETs). Solution‐processed OFETs based on TCNBT IDT exhibited a charge‐carrier mobility of up to μe≈0.15 cm2 V−1 s−1 with excellent ambient stability for 100 hours, highlighting the benefits of the cyanated end group and the synthetic approach.
A new strongly electron‐accepting end group, 2,1,3‐benzothiadiazole‐4,5,6‐tricarbonitrile (TCNBT), has been prepared by a one‐step sixfold nucleophilic substitution reaction. Cyanation results in a significant enhancement of the electron affinity in comparison to the fluorinated analogue, and the material demonstrates promising n‐type performance in solution processed organic field‐effect transistors with excellent stability. |
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ISSN: | 1433-7851 1521-3773 |
DOI: | 10.1002/anie.202013625 |