Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors

We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers with a similar thicknesses, but with different capacitances. In order to evaluate the characteristics of the ferroelectrics with a buffer layer, the polarization-voltage characteristics of the capacitor, the transfer characteristics, and the retention characteristics of the transistors were investigated. As the capacitance of the buffer layer increased, high remnant polarization ( ), high hysteresis, and long retention times were observed. Exceptionally, when poly(methylmethacrylate) and rigid poly(aryl ether) (poly(9,9-bis(4-hydroxyphenyl)fluorene- -decafluorobiphenyl)) were used as the buffer layer, had a value close to 0 in the dynamic measurement polarization-voltage (P-V) characteristic, but the quasi-static measurement transfer characteristic and the static measurement retention characteristic showed relatively high hysteresis and long retention times. Our study provides a scientific and technical basis for the design of ferroelectric memory and neuromorphic devices.