Single-photon emission from isolated monolayer islands of InGaN

We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed, and the main transmission is shown to act as a bright, stable, and fast single-photon emitter with a wavelength of ~400 nm. Quantum emission: a better way to release single photons Monolayers of indium gallium nitride (InGaN) sandwiched within isolated nano-pillars composed of gallium nitride (GaN) can be stimulated to emit light in the near-ultraviolet region of the spectrum, one photon at a time. This achievement, by researchers in China, Japan and Germany led by Xinqiang Wang at Peking University, opens a novel route to single-photon emission for research and potential commercial applications. Single-photon emitters are keenly sought for developing new optical quantum computing technologies, including secure communication systems known as quantum key technologies. Several single-photon emission methods already exist, but each is associated with drawbacks, including difficulties with control and stability. The researchers believe their InGaN system could have advantages including wide tunability of the emitted wavelength and compatibility with silicon substrates for manufacturing optoelectronic and power handling devices.