Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (

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Veröffentlicht in:ACS nano 2020-05, Vol.14 (5), p.5754-5762
Hauptverfasser: El Abbassi, Maria, Perrin, Mickael L, Barin, Gabriela Borin, Sangtarash, Sara, Overbeck, Jan, Braun, Oliver, Lambert, Colin J, Sun, Qiang, Prechtl, Thorsten, Narita, Akimitsu, Müllen, Klaus, Ruffieux, Pascal, Sadeghi, Hatef, Fasel, Roman, Calame, Michel
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Sprache:eng
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Zusammenfassung:Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (
ISSN:1936-0851
1936-086X
DOI:10.1021/acsnano.0c00604