Mott gap collapse in lightly hole-doped Sr2−xKxIrO4
The evolution of Sr 2 IrO 4 upon carrier doping has been a subject of intense interest, due to its similarities to the parent cuprates, yet the intrinsic behaviour of Sr 2 IrO 4 upon hole doping remains enigmatic. Here, we synthesize and investigate hole-doped Sr 2− x K x IrO 4 utilizing a combinati...
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Veröffentlicht in: | Nature communications 2020-05, Vol.11 (1), p.2597-2597, Article 2597 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The evolution of Sr
2
IrO
4
upon carrier doping has been a subject of intense interest, due to its similarities to the parent cuprates, yet the intrinsic behaviour of Sr
2
IrO
4
upon hole doping remains enigmatic. Here, we synthesize and investigate hole-doped Sr
2−
x
K
x
IrO
4
utilizing a combination of reactive oxide molecular-beam epitaxy, substitutional diffusion and in-situ angle-resolved photoemission spectroscopy. Upon hole doping, we observe the formation of a coherent, two-band Fermi surface, consisting of both hole pockets centred at (
π
, 0) and electron pockets centred at (
π
/2,
π
/2). In particular, the strong similarities between the Fermi surface topology and quasiparticle band structure of hole- and electron-doped Sr
2
IrO
4
are striking given the different internal structure of doped electrons versus holes.
Doped Sr
2
IrO
4
is of interest because of its close similarities to La
2
CuO
4
, a parent compound of the cuprates. Nelson et al. reveal the intrinsic evolution of its electronic structure with hole doping by avoiding the strong in-plane disorder introduced by previously used chemical substitutions. |
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ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/s41467-020-16425-z |