Inoculation of Azospirillum brasilense associated with silicon as a liming source to improve nitrogen fertilization in wheat crops
This research was developed to investigate whether inoculation with Azospirillum brasilense in combination with silicon (Si) can enhance N use efficiency (NUE) in wheat and to evaluate and correlate nutritional and productive components and wheat grain yield. The study was carried out on a Rhodic Ha...
Gespeichert in:
Veröffentlicht in: | Scientific reports 2020-04, Vol.10 (1), p.6160-6160, Article 6160 |
---|---|
Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | This research was developed to investigate whether inoculation with
Azospirillum brasilense
in combination with silicon (Si) can enhance N use efficiency (NUE) in wheat and to evaluate and correlate nutritional and productive components and wheat grain yield. The study was carried out on a Rhodic Hapludox under a no-till system with a completely randomized block design with four replications in a 2 × 2 × 5 factorial scheme: two liming sources (with Ca and Mg silicate as the Si source and limestone); two inoculations (control - without inoculation and seed inoculation with
A
.
brasilense
) and five side-dress N rates (0, 50, 100, 150 and 200 kg ha
−1
). The results of this study showed positive improvements in wheat growth production parameters, NUE and grain yield as a function of inoculation associated with N rates. Inoculation can complement and optimize N fertilization, even with high N application rates. The potential benefits of Si use were less evident; however, the use of Si can favour N absorption, even when associated with
A
.
brasilense
. Therefore, studies conducted under tropical conditions with Ca and Mg silicate are necessary to better understand the role of Si applied alone or in combination with growth-promoting bacteria such as
A
.
brasilense
. |
---|---|
ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/s41598-020-63095-4 |