Multi-level anomalous Hall resistance in a single Hall cross for the applications of neuromorphic device

We demonstrate the process of obtaining memristive multi-states Hall resistance (R H ) change in a single Hall cross (SHC) structure. Otherwise, the working mechanism successfully mimics the behavior of biological neural systems. The motion of domain wall (DW) in the SHC was used to control the asce...

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Veröffentlicht in:Scientific reports 2020-01, Vol.10 (1), p.1285-1285, Article 1285
Hauptverfasser: Kim, Y.-U., Kwon, J., Hwang, H.-K., Purnama, I., You, C.-Y.
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Sprache:eng
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Zusammenfassung:We demonstrate the process of obtaining memristive multi-states Hall resistance (R H ) change in a single Hall cross (SHC) structure. Otherwise, the working mechanism successfully mimics the behavior of biological neural systems. The motion of domain wall (DW) in the SHC was used to control the ascend (or descend) of the R H amplitude. The primary synaptic functions such as long-term potentiation (LTP), long-term depression (LTD), and spike-time-dependent plasticity (STDP) could then be emulated by regulating R H . Applied programmable magnetic field pulses are in varying conditions such as intensity and duration to adjust R H . These results show that analog readings of DW movement can be closely resembled with the change of synaptic weight and have great potentials for bioinspired neuromorphic computing.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-020-58223-z