Quantum spin-valley Hall effect in AB-stacked bilayer silicene

Our density functional theory calculations show that while AB-stacked bilayer silicene has a non-quantized spin-valley Chern number, there exist backscattering-free gapless edge states within the bulk gap, leading to a quantum spin-valley Hall effect. Using a tight-binding model for a honeycomb bila...

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Veröffentlicht in:	Scientific reports 2019-12, Vol.9 (1), p.19426-9, Article 19426
Hauptverfasser:	Lee, Kyu Won, Lee, Cheol Eui
Format:	Artikel
Sprache:	eng
Schlagworte:	639/766 639/925 Electromagnetism Humanities and Social Sciences multidisciplinary Science Science (multidisciplinary)
Online-Zugang:	Volltext
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