Quantum spin-valley Hall effect in AB-stacked bilayer silicene
Our density functional theory calculations show that while AB-stacked bilayer silicene has a non-quantized spin-valley Chern number, there exist backscattering-free gapless edge states within the bulk gap, leading to a quantum spin-valley Hall effect. Using a tight-binding model for a honeycomb bila...
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| Veröffentlicht in: | Scientific reports 2019-12, Vol.9 (1), p.19426-9, Article 19426 |
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| creator | Lee, Kyu Won Lee, Cheol Eui |
| description | Our density functional theory calculations show that while AB-stacked bilayer silicene has a non-quantized spin-valley Chern number, there exist backscattering-free gapless edge states within the bulk gap, leading to a quantum spin-valley Hall effect. Using a tight-binding model for a honeycomb bilayer, we found that the interlayer potential difference and the staggered AB-sublattice potential lead to abrupt and gradual change of the valley Chern number from a quantized value to zero, respectively, while maintaining backscattering-free gapless edge states if the valley Chern number is not too close to zero. Under an inversion symmetry-breaking potential in the form of the staggered AB-sublattice potential, such as an antiferromagnetic order and a hexagonal diatomic sheet, a finite but non-quantized (spin-)valley Chern number can correspond to a quantum (spin-)valley Hall insulator. |
| doi_str_mv | 10.1038/s41598-019-55927-9 |
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| title | Quantum spin-valley Hall effect in AB-stacked bilayer silicene |
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