Three port logic gate using forward volume spin wave interference in a thin yttrium iron garnet film

We demonstrate a logic gate based on interference of forward volume spin waves (FVSWs) propagating in a 54 nm thick, 100 μm wide yttrium iron garnet waveguide grown epitaxially on a garnet substrate. Two FVSWs injected by coplanar waveguides were made to interfere constructively and destructively by varying their phase difference, showing an XNOR logic function. The reflected and resonant waves generated at the edges of the waveguide were suppressed using spin wave absorbers. The observed isolation ratio was 19 dB for a magnetic field of ~2.80 kOe ( = 223 kA m −1 ) applied perpendicular to the film. The wavelength and device length were ~8.9 μm and ~53 μm, respectively. Further, the interference state of the SWs was analyzed using three-dimensional radio frequency simulations.