Diamond Etching Beyond 10 μm with Near-Zero Micromasking

To exploit the exceptional properties of diamond, new high quality fabrication techniques are needed to produce high performing devices. Etching and patterning diamond to depths beyond one micron has proven challenging due to the hardness and chemical resistance of diamond. A new cyclic Ar/O 2 - Ar/...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Scientific reports 2019-10, Vol.9 (1), p.15619-6, Article 15619
Hauptverfasser: Hicks, Marie-Laure, Pakpour-Tabrizi, Alexander C., Jackman, Richard B.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:To exploit the exceptional properties of diamond, new high quality fabrication techniques are needed to produce high performing devices. Etching and patterning diamond to depths beyond one micron has proven challenging due to the hardness and chemical resistance of diamond. A new cyclic Ar/O 2 - Ar/Cl 2 ICP RIE process has been developed to address micromasking issues from the aluminium mask by optimising the proportion of O 2 in the plasma and introducing a preferential “cleaning” step. High quality smooth features up to, but not limited to, 10.6  μ m were produced with an average etched surface roughness of 0.47 nm at a diamond etch rate of 45 nm/min and 16.9:1 selectivity.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-019-51970-8