Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition

The wide applications of ultrathin group IV metal oxide films (TiO 2 , ZrO 2 and HfO 2 ) probably expose materials to potentially reactive etchants and solvents, appealing for extraordinary chemical stability and corrosion resistance property. In this paper, TiO 2 ultrathin films were deposited on S...

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Veröffentlicht in:Scientific reports 2019-07, Vol.9 (1), p.10438-12, Article 10438
Hauptverfasser: Li, Min, Jin, Zhi-Xian, Zhang, Wei, Bai, Yu-Hang, Cao, Yan-Qiang, Li, Wei-Ming, Wu, Di, Li, Ai-Dong
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Sprache:eng
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Zusammenfassung:The wide applications of ultrathin group IV metal oxide films (TiO 2 , ZrO 2 and HfO 2 ) probably expose materials to potentially reactive etchants and solvents, appealing for extraordinary chemical stability and corrosion resistance property. In this paper, TiO 2 ultrathin films were deposited on Si at 200 °C while ZrO 2 and HfO 2 were grown at 250 °C to fit their growth temperature window, by thermal atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). A variety of chemical liquid media including 1 mol/L H 2 SO 4 , 1 mol/L HCl, 1 mol/L KOH, 1 mol/L KCl, and 18 MΩ deionized water were used to test and compare chemical stability of all these as-deposited group IV metal oxides thin films, as well as post-annealed samples at various temperatures. Among these metal oxides, TALD/PEALD HfO 2 ultrathin films exhibit the best chemical stability and anti-corrosion property without any change in thickness after long time immersion into acidic, alkaline and neutral solutions. As-deposited TALD ZrO 2 ultrathin films have slow etch rate of 1.06 nm/day in 1 mol/L HCl, however other PEALD ZrO 2 ultrathin films and annealed TALD ones show better anti-acid stability, indicating the role of introduction of plasma O 2 in PEALD and post-thermal treatment. As-deposited TiO 2 ultrathin films by TALD and PEALD are found to be etched slowly in acidic solutions, but the PEALD can decrease the etching rate of TiO 2 by ~41%. After post-annealing, TiO 2 ultrathin films have satisfactory corrosion resistance, which is ascribed to the crystallization transition from amorphous to anatase phase and the formation of 5% Si-doped TiO 2 ultrathin layers on sample surfaces, i.e. Ti-silicate. ZrO 2 , and TiO 2 ultrathin films show excellent corrosion endurance property in basic and neutral solutions. Simultaneously, 304 stainless steel coated with PEALD-HfO 2 is found to have a lower corrosion rate than that with TALD-HfO 2 by means of electrochemical measurement. The pre-treatment of plasma H 2 to 304 stainless steel can effectively reduce interfacial impurities and porosity of overlayers with significantly enhanced corrosion endurance. Above all, the chemical stability and anti-corrosion properties of IV group metal oxide coatings can be improved by using PEALD technique, post-annealing process and plasma H 2 pre-treatment to substrates.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-019-47049-z