Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric

We report transport measurements of dual gated MoS 2 and WSe 2 devices using atomic layer deposition grown Al 2 O 3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the...

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Veröffentlicht in:	Scientific reports 2019-06, Vol.9 (1), p.1-6, Article 8769
Hauptverfasser:	Lau, Chit Siong, Chee, Jing Yee, Thian, Dickson, Kawai, Hiroyo, Deng, Jie, Wong, Swee Liang, Ooi, Zi En, Lim, Yee-Fun, Goh, Kuan Eng Johnson
Format:	Artikel
Sprache:	eng
Schlagworte:	142/126 639/301/357/1018 639/925/357/1018 Aluminum oxide Electrostatic properties Humanities and Social Sciences Molybdenum disulfide multidisciplinary Physics Quantum dots Science Simulation
Online-Zugang:	Volltext
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