Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric

Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric

We report transport measurements of dual gated MoS 2 and WSe 2 devices using atomic layer deposition grown Al 2 O 3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the...

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Veröffentlicht in:Scientific reports 2019-06, Vol.9 (1), p.1-6, Article 8769
Hauptverfasser: Lau, Chit Siong, Chee, Jing Yee, Thian, Dickson, Kawai, Hiroyo, Deng, Jie, Wong, Swee Liang, Ooi, Zi En, Lim, Yee-Fun, Goh, Kuan Eng Johnson
Format: Artikel
Sprache:eng
Schlagworte:
142/126
639/301/357/1018
639/925/357/1018
Aluminum oxide
Electrostatic properties
Humanities and Social Sciences
Molybdenum disulfide
multidisciplinary
Physics
Quantum dots
Science
Simulation
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Zusammenfassung:We report transport measurements of dual gated MoS 2 and WSe 2 devices using atomic layer deposition grown Al 2 O 3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-019-45392-9