Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

We investigated the lateral distribution of the equilibrium carrier concentration ( n 0 ) along the channel and the effects of channel length ( L ) on the source-drain series resistance ( R ext ) in the top-gate self-aligned (TG-SA) coplanar structure amorphous indium-gallium-zinc oxide (a-IGZO) thi...

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Veröffentlicht in:	Scientific reports 2019-04, Vol.9 (1), p.6588-6588, Article 6588
Hauptverfasser:	Hong, Sae-Young, Kim, Hee-Joong, Kim, Dae-Hwan, Jeong, Ha-Yun, Song, Sang-Hun, Cho, In-Tak, Noh, Jiyong, Yun, Pil Sang, Lee, Seok-Woo, Park, Kwon-Shik, Yoon, SooYoung, Kang, In Byeong, Kwon, Hyuck-In
Format:	Artikel
Sprache:	eng
Schlagworte:	639/166/987 639/301/1005/1007 Conductance Gallium Humanities and Social Sciences Lateral diffusion multidisciplinary Science Science (multidisciplinary) Thin films Transistors Transmission lines Zinc oxide
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