Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

We investigated the lateral distribution of the equilibrium carrier concentration ( n 0 ) along the channel and the effects of channel length ( L ) on the source-drain series resistance ( R ext ) in the top-gate self-aligned (TG-SA) coplanar structure amorphous indium-gallium-zinc oxide (a-IGZO) thi...

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Veröffentlicht in:Scientific reports 2019-04, Vol.9 (1), p.6588-6588, Article 6588
Hauptverfasser: Hong, Sae-Young, Kim, Hee-Joong, Kim, Dae-Hwan, Jeong, Ha-Yun, Song, Sang-Hun, Cho, In-Tak, Noh, Jiyong, Yun, Pil Sang, Lee, Seok-Woo, Park, Kwon-Shik, Yoon, SooYoung, Kang, In Byeong, Kwon, Hyuck-In
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Sprache:eng
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Zusammenfassung:We investigated the lateral distribution of the equilibrium carrier concentration ( n 0 ) along the channel and the effects of channel length ( L ) on the source-drain series resistance ( R ext ) in the top-gate self-aligned (TG-SA) coplanar structure amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The lateral distribution of n 0 across the channel was extracted using the paired gate-to-source voltage ( V GS )-based transmission line method and the temperature-dependent transfer characteristics obtained from the TFTs with different L s. n 0 abruptly decreased with an increase in the distance from the channel edge near the source/drain junctions; however, much smaller gradient of n 0 was observed in the region near the middle of the channel. The effect of L on the R ext in the TG-SA coplanar a-IGZO TFT was investigated by applying the drain current-conductance method to the TFTs with various L s. The increase of R ext was clearly observed with an increase in L especially at low V GS s, which was possibly attributed to the enhanced carrier diffusion near the source/drain junctions due to the larger gradient of the carrier concentration in the longer channel devices. Because the lateral carrier diffusion and the relatively high R ext are the critical issues in the TG-SA coplanar structure-based oxide TFTs, the results in this work are expected to be useful in further improving the electrical performance and uniformity of the TG-SA coplanar structure oxide TFTs.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-019-43186-7