Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors
We investigated the lateral distribution of the equilibrium carrier concentration ( n 0 ) along the channel and the effects of channel length ( L ) on the source-drain series resistance ( R ext ) in the top-gate self-aligned (TG-SA) coplanar structure amorphous indium-gallium-zinc oxide (a-IGZO) thi...
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Veröffentlicht in: | Scientific reports 2019-04, Vol.9 (1), p.6588-6588, Article 6588 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We investigated the lateral distribution of the equilibrium carrier concentration (
n
0
) along the channel and the effects of channel length (
L
) on the source-drain series resistance (
R
ext
) in the top-gate self-aligned (TG-SA) coplanar structure amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The lateral distribution of
n
0
across the channel was extracted using the paired gate-to-source voltage (
V
GS
)-based transmission line method and the temperature-dependent transfer characteristics obtained from the TFTs with different
L
s.
n
0
abruptly decreased with an increase in the distance from the channel edge near the source/drain junctions; however, much smaller gradient of
n
0
was observed in the region near the middle of the channel. The effect of
L
on the
R
ext
in the TG-SA coplanar a-IGZO TFT was investigated by applying the drain current-conductance method to the TFTs with various
L
s. The increase of
R
ext
was clearly observed with an increase in
L
especially at low
V
GS
s, which was possibly attributed to the enhanced carrier diffusion near the source/drain junctions due to the larger gradient of the carrier concentration in the longer channel devices. Because the lateral carrier diffusion and the relatively high
R
ext
are the critical issues in the TG-SA coplanar structure-based oxide TFTs, the results in this work are expected to be useful in further improving the electrical performance and uniformity of the TG-SA coplanar structure oxide TFTs. |
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ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/s41598-019-43186-7 |