Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides

Materials for nanophotonic devices ideally combine ease of deposition, very high refractive index, and facile pattern formation through lithographic templating and/or etching. In this work, we present a scalable method for producing high refractive index WS 2 layers by chemical conversion of WO 3 sy...

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Veröffentlicht in:Scientific reports 2019-02, Vol.9 (1), p.2768-2768, Article 2768
Hauptverfasser: Chen, Christopher T., Pedrini, Jacopo, Gaulding, E. Ashley, Kastl, Christoph, Calafiore, Giuseppe, Dhuey, Scott, Kuykendall, Tevye R., Cabrini, Stefano, Toma, Francesca M., Aloni, Shaul, Schwartzberg, Adam M.
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Sprache:eng
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Zusammenfassung:Materials for nanophotonic devices ideally combine ease of deposition, very high refractive index, and facile pattern formation through lithographic templating and/or etching. In this work, we present a scalable method for producing high refractive index WS 2 layers by chemical conversion of WO 3 synthesized via atomic layer deposition (ALD). These conformal nanocrystalline thin films demonstrate a surprisingly high index of refraction (n > 3.9), and structural fidelity compatible with lithographically defined features down to ~10 nm. Although this process yields highly polycrystalline films, the optical constants are in agreement with those reported for single crystal bulk WS 2 . Subsequently, we demonstrate three photonic structures - first, a two-dimensional hole array made possible by patterning and etching an ALD WO 3 thin film before conversion, second, an analogue of the 2D hole array first patterned into fused silica before conformal coating and conversion, and third, a three-dimensional inverse opal photonic crystal made by conformal coating of a self-assembled polystyrene bead template. These results can be trivially extended to other transition metal dichalcogenides, thus opening new opportunities for photonic devices based on high refractive index materials.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-019-39115-3