Facile reduction of graphene oxide suspensions and films using glass wafers

This paper reports a facile and green method for conversion of graphene oxide (GO) into graphene by low-temperature heating (80 °C) in the presence of a glass wafer. Compared to conventional GO chemical reduction methods, the presented approach is easy-scalable, operationally simple, and based on th...

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Veröffentlicht in:Scientific reports 2018-09, Vol.8 (1), p.14154-11, Article 14154
Hauptverfasser: Rabchinskii, Maxim K., Dideikin, Arthur T., Kirilenko, Demid A., Baidakova, Marina V., Shnitov, Vladimir V., Roth, Friedrich, Konyakhin, Sergei V., Besedina, Nadezhda A., Pavlov, Sergei I., Kuricyn, Roman A., Lebedeva, Natalie M., Brunkov, Pavel N., Vul’, Alexander Ya
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Sprache:eng
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Zusammenfassung:This paper reports a facile and green method for conversion of graphene oxide (GO) into graphene by low-temperature heating (80 °C) in the presence of a glass wafer. Compared to conventional GO chemical reduction methods, the presented approach is easy-scalable, operationally simple, and based on the use of a non-toxic recyclable deoxygenation agent. The efficiency of the proposed method is further expanded by the fact that it can be applied for reducing both GO suspensions and large-scale thin films formed on various substrates prior to the reduction process. The quality of the obtained reduced graphene oxide (rGO) strongly depends on the type of the used glass wafer, and, particularly, magnesium silicate glass can provide rGO with the C/O ratio of 7.4 and conductivity of up to 33000 S*cm −1 . Based on the data obtained, we have suggested a mechanism of the observed reduction process in terms of the hydrolysis of the glass wafer with subsequent interaction of the leached alkali and alkali earth cations and silicate anions with graphene oxide, resulting in elimination of the oxygen-containing groups from the latter one. The proposed approach can be efficiently used for low-cost bulk-quantity production of graphene and graphene-based materials for a wide field of applications.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-018-32488-x