Sustainable p-type copper selenide solar material with ultra-large absorption coefficient† †Electronic supplementary information (ESI) available: X-ray crystallographic data, in CIF format, for the single crystal structure refinements of Cu4TiSe4 at 300 K. Tables S1–S3 and Fig. S1–S9. see DOI: 10.1039/c8sc00873f
We report the synthesis of CTSe, a p-type titanium copper selenide semiconductor. Its band gap (1.15 eV) and its ultra-large absorption coefficient (10 5 cm –1 ) in the entire visible range make it a promising Earth-abundant solar absorber material. Earth-abundant solar absorber materials with large...
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Veröffentlicht in: | Chemical science (Cambridge) 2018-05, Vol.9 (24), p.5405-5414 |
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Sprache: | eng |
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Zusammenfassung: | We report the synthesis of CTSe, a p-type titanium copper selenide semiconductor. Its band gap (1.15 eV) and its ultra-large absorption coefficient (10
5
cm
–1
) in the entire visible range make it a promising Earth-abundant solar absorber material.
Earth-abundant solar absorber materials with large optical absorption coefficients in the visible enable the fabrication of low-cost high-efficiency single and multi-junction thin-film solar cells. Here, we report a new p-type semiconductor, Cu
4
TiSe
4
(CTSe), featuring indirect (1.15 eV) and direct (1.34 eV) band gaps in the optimal range for solar absorber materials. CTSe crystallizes in a new noncentrosymmetric cubic structure (space group
F
4[combining macron]3
c
) in which CuSe
4
tetrahedra share edges and corners to form octahedral anionic clusters, [Cu
4
Se
4
]
4–
, which in turn share corners to build the three-dimensional framework, with Ti
4+
ions located at tetrahedral interstices within the channels. The unique crystal structure and the Ti 3d orbital character of the conduction band of CTSe give rise to near-optimal band gap values and ultra-large absorption coefficients (larger than 10
5
cm
–1
) throughout the visible range, which are promising for scalable low-cost high-efficiency CTSe-based thin-film solar cells. |
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ISSN: | 2041-6520 2041-6539 |
DOI: | 10.1039/c8sc00873f |