Dielectric, Piezoelectric, and Vibration Properties of the LiF-Doped (Ba 0.95 Ca 0.05 )(Ti 0.93 Sn 0.07 )O₃ Lead-Free Piezoceramic Sheets
By the conventional solid state reaction method, a small amount of lithium fluoride (LiF) was used as the sintering promoter to improve the sintering and piezoelectric characteristics of (Ba Ca )(Ti Sn )O₃ (BCTS) lead-free piezoceramic sheets. Using X-ray diffraction (XRD) and a scanning electron mi...
Gespeichert in:
Veröffentlicht in: | Materials 2018-01, Vol.11 (2), p.182 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | By the conventional solid state reaction method, a small amount of lithium fluoride (LiF) was used as the sintering promoter to improve the sintering and piezoelectric characteristics of (Ba
Ca
)(Ti
Sn
)O₃ (BCTS) lead-free piezoceramic sheets. Using X-ray diffraction (XRD) and a scanning electron microscope (SEM), the inferences of the crystalline and surface microstructures were obtained and analyzed. Then, the impedance analyzer and d
-meter were used to measure the dielectric and piezoelectric characteristics. In this study, the optimum sintering temperature of the BCTS sheets decreased from 1450 °C to 1390 °C due to LiF doping. For the 0.07 wt % LiF-doped BCTS sheets sintered at 1390 °C, the piezoelectric constant (d
) is 413 pC/N, the electric-mechanical coupling coefficient (k
) is 47.5%, the dielectric loss (tan δ) is 3.9%, and the dielectric constant (ε
) is 8100, which are all close to or even better than that of the pure undoped BCTS ceramics. The Curie temperature also improved, from 85 °C for pure BCTS to 140 °C for BCTS-0.07 LiF sheets. Furthermore, by using the vibration system and fixing 1.5 g tip mass at the end of the sheets, as the vibration frequency is 20 Hz, the proposed piezoelectric ceramic sheets also reveal a good energy harvesting performance at the maximum output peak voltage of 4.6 V, which is large enough and can be applied in modern low-power electronic products. |
---|---|
ISSN: | 1996-1944 1996-1944 |
DOI: | 10.3390/ma11020182 |