Growth and properties of wide bandgap (MgSe)n(ZnxCd1−xSe)m short-period superlattices

•Molecular beam epitaxy growth and (MgSe)n(ZnCdSe)m short period superlattices.•Extension of the bandgaps reported in this material system to the 2.9–3.42 eV range.•Characterization and analysis of grown samples showing good crystal quality.•Comparison to ZnCdMgSe random alloy and short-period superlattices made.•Quantum wells utilizing the (MgSe)n(ZnCdSe)m short period superlattice as a barrier. We report the molecular beam epitaxy (MBE) growth and properties of (MgSe)n(ZnxCd1−x Se)m short-period superlattices(SPSLs) for potential application in II–VI devices grown on InP substrates. SPSL structures up to 1 µm thick with effective bandgaps ranging from 2.6 eV to above 3.42 eV are grown and characterized, extending the typical range possible for the ZnxCdyMg1−x−ySe random alloy beyond 3.2 eV. Additionally, ZnxCd1−xSe single and multiple quantum well structures using the SPSL barriers are also grown and investigated. The structures are characterized utilizing reflection high-energy electron diffraction, X-ray reflectance, X-ray diffraction and photoluminescence. We observed layer-by-layer growth and smoother interfaces in the QWs grown with SPSL when compared to the ZnxCdyMg1−x−ySe random alloy. The results indicate that this materials platform is a good candidate to replace the random alloy in wide bandgap device applications.