Porous Dielectrics in Microelectronic Wiring Applications

Porous insulators are utilized in the wiring structure of microelectronic devices as a means of reducing, through low dielectric permittivity, power consumption and signal delay in integrated circuits. They are typically based on low density modifications of amorphous SiO2 known as SiCOH or carbon-d...

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Veröffentlicht in:Materials 2010-01, Vol.3 (1), p.536-562
1. Verfasser: McGahay, Vincent
Format: Artikel
Sprache:eng
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Zusammenfassung:Porous insulators are utilized in the wiring structure of microelectronic devices as a means of reducing, through low dielectric permittivity, power consumption and signal delay in integrated circuits. They are typically based on low density modifications of amorphous SiO2 known as SiCOH or carbon-doped oxides, in which free volume is created through the removal of labile organic phases. Porous dielectrics pose a number of technological challenges related to chemical and mechanical stability, particularly in regard to semiconductor processing methods. This review discusses porous dielectric film preparation techniques, key issues encountered, and mitigation strategies.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma3010536