Quantitative strain analysis of InAs/GaAs quantum dot materials
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattic...
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Veröffentlicht in: | Scientific reports 2017-03, Vol.7 (1), p.45376-45376, Article 45376 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nm into the GaAs spacer layer below and above the QDs. Finally, we show how V-shaped dislocations originating at the QD/GaAs interface efficiently remove most of the lattice mismatch induced tetragonal distortions in and around the QD. |
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ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/srep45376 |