Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration sy...
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| Veröffentlicht in: | Nanoscale research letters 2017-01, Vol.12 (1), p.56-56, Article 56 |
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| container_title | Nanoscale research letters |
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| creator | Shen, Wen-Wei Chen, Kuan-Neng |
| description | 3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper. |
| doi_str_mv | 10.1186/s11671-017-1831-4 |
| format | Article |
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| subjects | Chemistry and Materials Science Materials Science Molecular Medicine Nano Review Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering |
| title | Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV) |
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