Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)

Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)

3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration sy...

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Veröffentlicht in:Nanoscale research letters 2017-01, Vol.12 (1), p.56-56, Article 56
Hauptverfasser: Shen, Wen-Wei, Chen, Kuan-Neng
Format: Artikel
Sprache:eng
Schlagworte:
Chemistry and Materials Science
Materials Science
Molecular Medicine
Nano Review
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
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Zusammenfassung:3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.
ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-017-1831-4