Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet

The gate fidelity and the coherence time of a quantum bit (qubit) are important benchmarks for quantum computation. We construct a qubit using a single electron spin in an Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average sin...

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Veröffentlicht in:Proceedings of the National Academy of Sciences - PNAS 2016-10, Vol.113 (42), p.11738-11743
Hauptverfasser: Kawakami, Erika, Jullien, Thibaut, Scarlino, Pasquale, Ward, Daniel R., Savage, Donald E., Lagally, Max G., Dobrovitski, Viatcheslav V., Friesen, Mark, Coppersmith, Susan N., Eriksson, Mark A., Vandersypen, Lieven M. K.
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Sprache:eng
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Zusammenfassung:The gate fidelity and the coherence time of a quantum bit (qubit) are important benchmarks for quantum computation. We construct a qubit using a single electron spin in an Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of ∼99% using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in the substrate. The coherence time measured using dynamical decoupling extends up to ∼400 μs for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limited by noise in the 10-kHz to 1-MHz range, possibly because charge noise affects the spin via the micromagnet gradient. This work shows that an electron spin in an Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification.
ISSN:0027-8424
1091-6490
DOI:10.1073/pnas.1603251113