Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation

The structural stability and electrical performance of SiO 2 grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO 2 film (thickness ~ 5 nm) and SiC...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Scientific reports 2016-10, Vol.6 (1), p.34945-34945, Article 34945
Hauptverfasser:	Kim, Dae-Kyoung, Jeong, Kwang-Sik, Kang, Yu-Seon, Kang, Hang-Kyu, Cho, Sang W., Kim, Sang-Ok, Suh, Dongchan, Kim, Sunjung, Cho, Mann-Ho
Format:	Artikel
Sprache:	eng
Schlagworte:	140/146 639/301/357/995 639/925/357/537 Absorption spectroscopy CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY electronic properties and materials Humanities and Social Sciences Leakage multidisciplinary Oxidation Oxidation process Photoelectron spectroscopy Plasma Science science & technology - other topics Silicon Spectroscopy Spectrum analysis structural properties Temperature effects X-ray absorption spectroscopy
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!