Temperature-dependent photoluminescence of surface-engineered silicon nanocrystals

In this work we report on temperature-dependent photoluminescence measurements (15–300 K), which have allowed probing radiative transitions and understanding of the appearance of various transitions. We further demonstrate that transitions associated with oxide in SiNCs show characteristic vibronic...

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Veröffentlicht in:Scientific reports 2016-06, Vol.6 (1), p.27727-27727, Article 27727
Hauptverfasser: Mitra, Somak, Švrček, Vladimir, Macias-Montero, Manual, Velusamy, Tamilselvan, Mariotti, Davide
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Sprache:eng
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Zusammenfassung:In this work we report on temperature-dependent photoluminescence measurements (15–300 K), which have allowed probing radiative transitions and understanding of the appearance of various transitions. We further demonstrate that transitions associated with oxide in SiNCs show characteristic vibronic peaks that vary with surface characteristics. In particular we study differences and similarities between silicon nanocrystals (SiNCs) derived from porous silicon and SiNCs that were surface-treated using a radio-frequency (RF) microplasma system.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep27727