Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response

Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response

BiFeO 3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ 

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Veröffentlicht in:Scientific reports 2016-05, Vol.6 (1), p.25535-25535, Article 25535
Hauptverfasser: Scarisoreanu, N. D., Craciun, F., Birjega, R., Ion, V., Teodorescu, V. S., Ghica, C., Negrea, R., Dinescu, M.
Format: Artikel
Sprache:eng
Schlagworte:
639/301/1023/1024
639/301/357/551
Dielectrics
Electron microscopy
External stimuli
Humanities and Social Sciences
multidisciplinary
Pressure
Science
Thin films
Transmission electron microscopy
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Zusammenfassung:BiFeO 3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ 
ISSN:2045-2322
2045-2322
DOI:10.1038/srep25535