Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

We present characterizations of few-layer titanium trisulfide (TiS 3 ) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratio...

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Veröffentlicht in:Scientific reports 2016-03, Vol.6 (1), p.22214-22214, Article 22214
Hauptverfasser: Island, Joshua O., Biele, Robert, Barawi, Mariam, Clamagirand, José M., Ares, José R., Sánchez, Carlos, van der Zant, Herre S. J., Ferrer, Isabel J., D’Agosta, Roberto, Castellanos-Gomez, Andres
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Sprache:eng
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Zusammenfassung:We present characterizations of few-layer titanium trisulfide (TiS 3 ) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS 3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS 3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS 3 in the random-phase-approximation (RPA) and find that the calculations are in qualitative agreement with the observed experimental optical transmittance.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep22214