High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures

High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures

High broad‐band photoresponsivity of mechanically formed InSe–graphene van der Waals heterostructures is achieved by exploiting the broad‐band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van...

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Veröffentlicht in:Advanced materials (Weinheim) 2015-07, Vol.27 (25), p.3760-3766
Hauptverfasser: Mudd, Garry W., Svatek, Simon A., Hague, Lee, Makarovsky, Oleg, Kudrynskyi, Zakhar R., Mellor, Christopher J., Beton, Peter H., Eaves, Laurence, Novoselov, Kostya S., Kovalyuk, Zakhar D., Vdovin, Evgeny E., Marsden, Alex J., Wilson, Neil R., Patanè, Amalia
Format: Artikel
Sprache:eng
Schlagworte:
Communication
Communications
Graphene
Heterostructures
indium selenide
photoconductivity
Spectral response
van der Waals crystals
Visible spectrum
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Zusammenfassung:High broad‐band photoresponsivity of mechanically formed InSe–graphene van der Waals heterostructures is achieved by exploiting the broad‐band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van der Waals heterostructures and the spectral response extends from the near‐infrared to the visible spectrum.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201500889