Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

We realize a device with biological synaptic behaviors by integrating silicon oxide (SiO x ) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO 2 –based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms and represent interesting potential applications for SiO x -based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH) 2 to generate the hydrogen bridge defect and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH) 2 . The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology.