Voltage divider effect for the improvement of variability and endurance of TaOx memristor

The impact of a series resistor (R S ) on the variability and endurance performance of memristor was studied in the TaO x memristive system. A dynamic voltage divider between the R S and memristor during both the set and the reset switching cycles can suppress the inherent irregularity of the voltage dropped on the memristor, resulting in a greatly reduced switching variability. By selecting the proper resistance value of R S for the set and reset cycles respectively, we observed a dramatically improved endurance of the TaO x memristor. Such a voltage divider effect can thus be critical for the memristor applications that require low variability, high endurance and fast speed.