A New Strategy of Lithography Based on Phase Separation of Polymer Blends

Herein, we propose a new strategy of maskless lithographic approach to fabricate micro/nano-porous structures by phase separation of polystyrene (PS)/Polyethylene glycol (PEG) immiscible polymer blend. Its simple process only involves a spin coating of polymer blend followed by a development with de...

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Veröffentlicht in:Scientific reports 2015-10, Vol.5 (1), p.15947, Article 15947
Hauptverfasser: Guo, Xu, Liu, Long, Zhuang, Zhe, Chen, Xin, Ni, Mengyang, Li, Yang, Cui, Yushuang, Zhan, Peng, Yuan, Changsheng, Ge, Haixiong, Wang, Zhenlin, Chen, Yanfeng
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Sprache:eng
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Zusammenfassung:Herein, we propose a new strategy of maskless lithographic approach to fabricate micro/nano-porous structures by phase separation of polystyrene (PS)/Polyethylene glycol (PEG) immiscible polymer blend. Its simple process only involves a spin coating of polymer blend followed by a development with deionized water rinse to remove PEG moiety, which provides an extremely facile, low-cost, easily accessible nanofabrication method to obtain the porous structures with wafer-scale. By controlling the weight ratio of PS/PEG polymer blend, its concentration and the spin-coating speed, the structural parameters of the porous nanostructure could be effectively tuned. These micro/nano porous structures could be converted into versatile functional nanostructures in combination with follow-up conventional chemical and physical nanofabrication techniques. As demonstrations of perceived potential applications using our developed phase separation lithography, we fabricate wafer-scale pure dielectric (silicon)-based two-dimensional nanostructures with high broadband absorption on silicon wafers due to their great light trapping ability, which could be expected for promising applications in the fields of photovoltaic devices and thermal emitters with very good performances and Ag nanodot arrays which possess a surface enhanced Raman scattering (SERS) enhancement factor up to 1.64 × 10 8 with high uniformity across over an entire wafer.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep15947