Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack

Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions...

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Veröffentlicht in:Scientific reports 2015-06, Vol.5 (1), p.11369-11369, Article 11369
Hauptverfasser: Zhang, Xichao, Zhou, Yan, Ezawa, Motohiko, Zhao, G. P., Zhao, Weisheng
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Sprache:eng
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Zusammenfassung:Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions and processes have been theoretically investigated and demonstrated, in which the gate voltage can be used to switch on/off a circuit. Our results provide the first time guidelines for practical realization of hybrid skyrmionic-electronic devices.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep11369