Analysis of oxygen vacancy in Co-doped ZnO using the electron density distribution obtained using MEM

Oxygen vacancy (V O ) strongly affects the properties of oxides. In this study, we used X-ray diffraction (XRD) to study changes in the V O concentration as a function of the Co-doping level of ZnO. Rietveld refinement yielded a different result from that determined via X-ray photoelectron spectroscopy (XPS), but additional maximum entropy method (MEM) analysis led it to compensate for the difference. V O tended to gradually decrease with increased Co doping, and ferromagnetic behavior was not observed regardless of the Co-doping concentration. MEM analysis demonstrated that reliable information related to the defects in the ZnO-based system can be obtained using X-ray diffraction alone.