Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS 2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency f T up to 42 GHz and a maximum oscillation frequency f MAX up to 50 GHz, exceeding the reported values for MoS 2 transistors to date ( f T ~0.9 GHz, f MAX ~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS 2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics. Molybdenum disulfide holds great potential for advanced flexible electronic devices. Here, using a transferred gate technique, the authors fabricate molybdenum disulfide-based transistors with optimized device geometry and contact, improving device speed and demonstrating gigahertz circuits with voltage gain.